PART |
Description |
Maker |
PBSS303NZ |
30 V, 5.5 A NPN low VCEsat (BISS) transistor 30伏,5.5安NPN型低饱和压降(BISS)晶体管
|
NXP Semiconductors N.V.
|
SC18IM700IPW SC18IM700 |
From old datasheet system Master I-2C - bus controller with UART interface
|
PHILIPS[Philips Semiconductors]
|
MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
OR3LP26B |
Field-Programmable System Chip (FPSC) Embedded Master/Target PCI Interface
|
AGERE[Agere Systems]
|
PCI9080 PCI9060 PCI9060ES PCI9060SD PCIB9060 |
12O COMPATIBLE PCI BUS MASTER INTERFACE CHIP FOR ADAPTERS AND EMBEDDED SYSTEMS
|
ETC[ETC]
|
RSA0K12A1003 RS60K11A9000 RSA0K11A900L |
Master Type(K Fader?/a> Master Type拢篓K Fader拢漏
|
ALPS ELECTRIC CO.,LTD.
|
AT91M55800A |
The AT91M55800A features 8K bytes of on-chip SRAM, an External Bus Interface, a 6-channel Timer/Counter, 3 USARTs, a Master/Slave SPI Interface, a Watchdog Timer, an 8-channel 10-bit ADC, a 2-channel 10-bit DAC, a Clock Generator, Real-tim
|
Atmel
|
OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
|
Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
|
PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体 60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
PBSS4021NT |
20 V, 4.3 A NPN low VCEsat (BISS) transistor 20 V, 4.3 A NPN low V_CEsat (BISS) transistor 4300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
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